• DocumentCode
    1495350
  • Title

    High-impedance voltage bias circuit for MOS amplifiers

  • Author

    Corner, D.J. ; Corner, D.T. ; Marble, W.J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Brigham Young Univ., Provo, UT, USA
  • Volume
    145
  • Issue
    6
  • fYear
    1998
  • fDate
    12/1/1998 12:00:00 AM
  • Firstpage
    437
  • Lastpage
    439
  • Abstract
    An MOS integrated circuit that delivers an equal DC bias voltage to several independent nodes through impedances in the range 1010 -1012 Ω is reported. One application of this circuit is that of providing bias to each stage of an iterative stage amplifier where high impedance is desired to allow small coupling capacitors between stages
  • Keywords
    MOS analogue integrated circuits; integrated circuit design; wideband amplifiers; 1E10 to 1E12 ohm; MOS amplifiers; MOS integrated circuit; coupling capacitors; high-impedance voltage bias circuit; independent nodes; iterative stage amplifier;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices and Systems, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2409
  • Type

    jour

  • DOI
    10.1049/ip-cds:19982395
  • Filename
    756342
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1495350