DocumentCode :
1495350
Title :
High-impedance voltage bias circuit for MOS amplifiers
Author :
Corner, D.J. ; Corner, D.T. ; Marble, W.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Brigham Young Univ., Provo, UT, USA
Volume :
145
Issue :
6
fYear :
1998
fDate :
12/1/1998 12:00:00 AM
Firstpage :
437
Lastpage :
439
Abstract :
An MOS integrated circuit that delivers an equal DC bias voltage to several independent nodes through impedances in the range 1010 -1012 Ω is reported. One application of this circuit is that of providing bias to each stage of an iterative stage amplifier where high impedance is desired to allow small coupling capacitors between stages
Keywords :
MOS analogue integrated circuits; integrated circuit design; wideband amplifiers; 1E10 to 1E12 ohm; MOS amplifiers; MOS integrated circuit; coupling capacitors; high-impedance voltage bias circuit; independent nodes; iterative stage amplifier;
fLanguage :
English
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2409
Type :
jour
DOI :
10.1049/ip-cds:19982395
Filename :
756342
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1495350
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