Title :
Performance of Ku-band on-chip matched Si monolithic amplifiers using 0.18-μm-gatelength MOSFETs
Author :
Yano, Hiroyuki ; Nakahara, Y. ; Hirayama, Takatsugu ; Suzuki, Yuya ; Furukawa, A.
Author_Institution :
Photonic & Wireless Devices Res. Labs., NEC Corp., Ibaraki
fDate :
6/1/2001 12:00:00 AM
Abstract :
We demonstrated Ku-band (12-20 GHz) Si MOSFET monolithic amplifiers with on-chip matching networks. In these amplifiers, we used 3-μm-thick Al-metal transmission lines on 8-μm-thick polyimide-SiON-SiO2 isolation layers for the matching networks. The amplifier showed a gain of 6-10 dB and a noise figure (NF) of 3.5-4 dB up to about 20 GHz, the highest gain and lowest NF yet reported for MOSFET amplifiers at this frequency. We also clarified the lossy on-chip inductor effect on the gain and noise performance of the amplifiers
Keywords :
MMIC amplifiers; MOSFET circuits; elemental semiconductors; silicon; 0.18 micron; 12 to 20 GHz; 3.5 to 4 dB; 6 to 10 dB; Al; Al-metal transmission line; Ku-band MMIC; Si; Si MOSFET monolithic amplifier; SiON-SiO2; gain; lossy inductor effect; noise figure; on-chip matching network; polyimide-SiON-SiO2 isolation layer; Frequency; Inductors; Low-noise amplifiers; MOSFET circuits; Network-on-a-chip; Noise figure; Noise measurement; Performance gain; Performance loss; Transmission lines;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
