DocumentCode
1495565
Title
22 GHz monolithically integrated oscillator in silicon bipolar technology
Author
Knapp, H. ; Wohlmuth, H.D. ; Böck, J. ; Scholtz, A.
Author_Institution
Corp. Res. & Technol., Siemens AG, Munich, Germany
Volume
35
Issue
6
fYear
1999
fDate
3/18/1999 12:00:00 AM
Firstpage
438
Lastpage
439
Abstract
A monolithically integrated oscillator with a tuning range of 19.5-23 GHz is presented. The circuit uses on-chip spiral inductors and achieves a phase noise of -91 dBc/Hz at an offset of 1 MHz. It is manufactured in a 0.5 μm production-near silicon bipolar technology with fT and fmax of 50 GHz. The oscillator consumes 18.5 mA at a supply voltage of 3.3 V
Keywords
MMIC oscillators; bipolar MMIC; elemental semiconductors; inductors; integrated circuit noise; phase noise; silicon; variable-frequency oscillators; 0.5 micron; 18.5 mA; 19.5 to 23 GHz; 3.3 V; 50 GHz; MMIC oscillators; Si; bipolar technology; monolithically integrated oscillator; offset; on-chip spiral inductors; phase noise; production-near IC technology; supply voltage;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990343
Filename
756376
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