DocumentCode :
1495571
Title :
A thin-film waveguide photodetector using hydrogenated amorphous silicon
Author :
Howerton, Marta McWright ; Batchman, Ted E.
Author_Institution :
Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
Volume :
6
Issue :
12
fYear :
1988
fDate :
12/1/1988 12:00:00 AM
Firstpage :
1854
Lastpage :
1860
Abstract :
Metal-silicon-metal cladding layers on dielectric waveguides exhibit coupling and absorption characteristics that make them useful as photodetectors for integrated optical applications. Multilayer computer-modeling techniques were applied to waveguide photodetectors in order to investigate field and power distributions, as well as the attenuation and phase response in the guiding region. A waveguide photodetector based on amorphous silicon was fabricated and demonstrated
Keywords :
dielectric waveguides; elemental semiconductors; integrated optics; metal-semiconductor-metal structures; photodetectors; silicon; absorption characteristics; amorphous Si; attenuation; dielectric waveguides; integrated optics; metal-insulator-metal cladding; multilayer computer-modeling; thin-film waveguide photodetector; Absorption; Amorphous materials; Application software; Dielectric thin films; Integrated optics; Optical attenuators; Optical coupling; Optical waveguides; Photodetectors; Transistors;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/50.9255
Filename :
9255
Link To Document :
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