DocumentCode :
1495642
Title :
Complex-stress accelerated lifetime test for high-power light-emitting diodes
Author :
Byungjin Ma ; Jemin Kim
Author_Institution :
Reliability Res. Center, Korea Electron. Technol. Inst., Seongnam, South Korea
Volume :
48
Issue :
8
fYear :
2012
Firstpage :
449
Lastpage :
450
Abstract :
To reduce testing time and enhance the accuracy of the lifetime estimation of light emitting diode (LED) packages, a new complex-stress accelerated lifetime test (ALT) is proposed, which is based on the combination of thermal stress and optical stress. An in situ monitoring of electrical, optical and thermal characteristics took place during the ALT. The transient response of voltage change in the LED chips was used to measure the thermal properties such as junction temperature and thermal resistance to consider the thermal stress. The relative optical power and luminous flux, monitored during the ALT, were used as the optical stress and a measure of lifetime prediction. Compared to a conventional temperature-stress ALT model, the proposed ALT model describes an actual optical degradation and thus enables accurate estimation of the lifetime of LED packages.
Keywords :
light emitting diodes; thermal stresses; LED chips; LED package; complex-stress accelerated lifetime test; high-power light emitting diodes; junction temperature; lifetime estimation; light emitting diode package; luminous flux; optical degradation; optical power; optical stress; thermal resistance; thermal stress; transient response;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2012.0040
Filename :
6183715
Link To Document :
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