Title :
Uncooled, low-driving-current 25.8 Gbit/s direct modulation using 1.3 μm AlGaInAs MQW distributed-reflector lasers
Author :
Matsuda, Manabu ; Simoyama, Takasi ; Uetake, A. ; Okumura, Susumu ; Ekawa, M. ; Yamamoto, Takayuki
Author_Institution :
Fujitsu Labs. Ltd. & Fujitsu Ltd., Atsugi, Japan
Abstract :
Uncooled, low-driving-current 25.8 Gbit/s direct modulation with clear eye-opening up to 85°C is demonstrated using 1.3 μm AIGalnAs mul- tiple quantum well (MQW) distributed-reflector lasers. The peak driving currents were as low as 30.0 and 38.9 mA at 25 and 85°C, respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; quantum well lasers; semiconductor quantum wells; AlGaInAs; MQW distributed-reflector lasers; bit rate 25.8 Gbit/s; current 30.0 mA; current 38.9 mA; direct modulation; low-driving-current; temperature 25 degC; temperature 85 degC; wavelength 1.3 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.0411
