DocumentCode
1495755
Title
Room temperature laser operation of bulk InGaAsN/GaAs structures grown by AP-MOVPE using N/sub 2/ as carrier gas
Author
Ougazzaden, A. ; Bouchoule, S. ; Mereuta, A. ; Rao, E.V.K. ; Decobert, J.
Author_Institution
Groupement d´Interet Econ. Route de Nozay, OPTO, Marcoussis, France
Volume
35
Issue
6
fYear
1999
fDate
3/18/1999 12:00:00 AM
Firstpage
474
Lastpage
475
Abstract
Long wavelength bulk InGaAsN semiconductor laser structures have been grown on GaAs substrate by AP-MOVPE, using DMHY and TBAs. After thermal annealing, GaAs/InGaAsN, and AlGaAs/InGaAsN Fabry-Perot laser diodes were processed from the wafers. At room temperature, stimulated emission was observed at peak wavelength from 1.15 to 1.38 /spl mu/m, and laser operation was achieved at 1.16 and 1.275 /spl mu/m. Infinite current density is extrapolated to 12 kA/cm/sup 2/ for AlGaAs/InGaAsN bulk laser diodes.
Keywords
semiconductor lasers; 1.15 to 1.38 micrometre; AP-MOVPE; DMHY; Fabry-Perot laser diodes; InGaAs-GaAs; N/sub 2/; TBAs; infinite current density; laser operation; room temperature laser operation; semiconductor laser structures; stimulated emission; thermal annealing;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990315
Filename
756401
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