Title :
Single-crystal ferroelectric microwave capacitor fabricated by separation by hydrogen implantation
Author :
Kub, F.J. ; Hobart, K.D. ; Pond, J.M. ; Kirchoefer, S.W.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
3/18/1999 12:00:00 AM
Abstract :
Microwave ferroelectric capacitors have been fabricated using separation by hydrogen ion implantation and transfer of a 500 nm thick single crystal SrTiO3 layer to an insulating glass substrate. The capacitor films are of high quality with a measured quality factor of nearly 100 at 10 GHz
Keywords :
Q-factor; ferroelectric capacitors; ferroelectric thin films; hydrogen; ion implantation; microwave devices; strontium compounds; thin film capacitors; 10 GHz; SrTiO3; high quality capacitor films; hydrogen ion implantation; insulating glass substrate; microwave ferroelectric capacitors; quality factor; separation by H implantation; single crystal SrTiO3 layer; single-crystal ferroelectric capacitor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990354
