DocumentCode
1495869
Title
0.1 μm Ga0.51In0.49P/In0.2Ga 0.8As PHEMT grown by GSMBE with high DC and RF performances
Author
Zaknoune, M. ; Schuler, O. ; Mollot, F. ; Théron, D. ; Crosnier, Y.
Author_Institution
Inst. d´´Electron. et de Microelectron. du Nord, CNRS, Villeneuve d´´Ascq, France
Volume
35
Issue
6
fYear
1999
fDate
3/18/1999 12:00:00 AM
Firstpage
501
Lastpage
502
Abstract
0.1 μm Ga0.51In0.49P/In0.2Ga 0.8As/GaAs PHEMTs grown by GSMBE have been realised. A new interface GaInP/InGaAs has been studied and optimised to give a 2-DEG density of 2×1012 cm-2 with a mobility of 5500 cm2/Vs at 300 K. The AuGe/Ni/Au ohmic contact has been also optimised (Rc=0.08 Ω mm) and a new nonselective wet chemical etching technique based on iodic acid (HIO3) has been developed. This device with single δ-doping exhibits state of the art DC and RF performances in this new system with a current density of 780 mA/mm, a breakdown voltage of 9 V a Gm of 700 mS/mm and an Ft of 120 GHz
Keywords
III-V semiconductors; chemical beam epitaxial growth; current density; doping profiles; etching; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; ohmic contacts; semiconductor device breakdown; semiconductor epitaxial layers; semiconductor growth; two-dimensional electron gas; 0.1 micron; 120 GHz; 2-DEG density; 300 K; 700 mS/mm; 9 V; DC performance; GSMBE; Ga0.51In0.49P-In0.2Ga0.8 As; PHEMT; RF performance; breakdown voltage; current density; nonselective wet chemical etching; ohmic contact; single δ-doping;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990239
Filename
756420
Link To Document