Title :
Process capability of local oxidation of silicon isolation technology for sub-half micrometre custom IC applications
Author_Institution :
Dept. of Electron. Eng., Changwon Nat. Univ., Kyungnam, South Korea
fDate :
3/18/1999 12:00:00 AM
Abstract :
The process capability of conventional LOCOS isolation for sub-half micrometre custom IC applications is investigated in terms of field oxide thinning and bird´s beak encroachment. A 0.4 μm isolation space appears to be the practical limit when the appropriate film thickness combination is used
Keywords :
application specific integrated circuits; isolation technology; oxidation; silicon; 0.4 micron; LOCOS isolation; Si; bird beak encroachment; field oxide thinning; isolation technology; local oxidation; process capability; sub-half micron custom IC applications;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990350
