• DocumentCode
    1495904
  • Title

    Sulphur passivation of dry-etched AlGaAs laser facets

  • Author

    Collot, P. ; Delalande, S. ; Olivier, J.

  • Author_Institution
    Lab. Central de Recherches, Thomson-CSF, Orsay, France
  • Volume
    35
  • Issue
    6
  • fYear
    1999
  • fDate
    3/18/1999 12:00:00 AM
  • Firstpage
    506
  • Lastpage
    508
  • Abstract
    The effects are reported of sulphur treatment in Na2S and (NH4)2S solutions for the passivation of AlGaAs laser facets, etched using Cl2-based chemically-assisted-ion-beam-etching. Compared to untreated lasers, a 37% average improvement in the catastrophic optical mirror damage threshold is measured on sulphur-treated broad-area CAIBE lasers
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; optical fabrication; passivation; semiconductor lasers; sputter etching; sulphur; (NH4)2S; (NH4)2S solution; AlGaAs; AlGaAs laser facets; Cl2; Cl2-based chemically-assisted ion beam etching; Na2S; Na2S solution; S; S passivation; broad-area CAIBE lasers; catastrophic optical mirror damage threshold; dry-etched laser facets; sulphur treatment;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990326
  • Filename
    756424
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1495904