Title :
Suppression of reverse-short-channel effect in sub-0.1 μm n-MOSFETs with Sb S/D implantation
Author :
Tsuno, M. ; Tanaka, M. ; Koh, M. ; Iwamoto, EL ; Murakami, H. ; Shibahara, K. ; Mattausch, M.M.
Author_Institution :
Res. Center for Nanodevices & Syst., Hiroshima Univ., Japan
fDate :
3/18/1999 12:00:00 AM
Abstract :
A study is presented into the reverse-short-channel effect (RSCE) for Sb S/D ion implantation at 10 keV. A high impurity concentration is found to reduce interstitial movement in the channel, which restricts the level RSCE at short-channel lengths. The interstitials can be healed by thermal treatment at 850°C directly after ion implantation, resulting in the suppression of the RSCE
Keywords :
MOSFET; annealing; antimony; doping profiles; impurity distribution; interstitials; ion implantation; 0.1 micron; 10 keV; 850 C; NMOSFET; RSCE suppression; Sb S/D implantation; Si:Sb; channel interstitial movement reduction; impurity concentration; ion implantation; n-MOSFETs; n-channel MOSFET; reverse-short-channel effect; short-channel lengths; submicron technology; thermal treatment;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990325
