Title :
Design of silicon hetero-interface photodetectors
Author :
Wu, Weishu ; Hawkins, Aaron R. ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
8/1/1997 12:00:00 AM
Abstract :
In a silicon hetero-interface photodetector, Si is used as the multiplication material to provide avalanche gain, while InGaAs is used as the absorption material. High quantum efficiency, high gain-bandwidth product, and low noise detection of wavelengths between 1.0 and 1.6 mm can be achieved in this way. We derive expressions for the frequency response for these detectors, present possible design variations, and analyze their performance. The effects of parasitics, transit time, and RC roll-off on frequency response are investigated and the 3-dB bandwidth and gain bandwidth product are calculated. Particular attention is paid to a 10 Gbit/s APD and we show that that a 3-dB bandwidth of 10 GHz and a gain-bandwidth product in excess of 400 GHz should be possible
Keywords :
III-V semiconductors; avalanche photodiodes; elemental semiconductors; frequency response; gallium arsenide; indium compounds; optical design techniques; photodetectors; silicon; 1 to 1.6 mm; 10 GHz; 10 Gbit/s; InGaAs; RC roll-off; Si; absorption material; avalanche gain; design variations; frequency response; gain bandwidth product; high gain-bandwidth product; high quantum efficiency; low noise detection; multiplication material; parasitics; silicon hetero-interface photodetectors; transit time; Absorption; Bandwidth; Detectors; Frequency response; Indium gallium arsenide; Indium phosphide; Marine vehicles; Photodetectors; Semiconductor device noise; Silicon;
Journal_Title :
Lightwave Technology, Journal of
