Title :
Wide Temperature Range Operation of 25-Gb/s 1.3-μm InGaAlAs Directly Modulated Lasers
Author :
Fukamachi, Toshihiko ; Adachi, Koichiro ; Shinoda, Kazunori ; Kitatani, Takeshi ; Tanaka, Shigehisa ; Aoki, Masahiro ; Tsuji, Shinji
Author_Institution :
Opnext Japan Inc., Yokohama, Japan
Abstract :
High-speed 1.3-μm directly modulated lasers (DMLs) have been developed to support sharply rising optical communications traffic. The most crucial requirement for these lasers is the ability to operate over a wide temperature range with no power-consuming electric cooler. Due to poor temperature characteristics resulting from its poor electron confinement in the multiquantum well, DMLs with InGaAsP material systems have been replaced by DMLs with InGaAlAs material systems, which have stronger electron confinement. In this paper, progress in uncooled 25-Gb/s 1.3-μm InGaAlAs DMLs is summarized. A 160-μm-long ridge-waveguide-type laser showed a lower threshold current Ith of 14.9 mA at high temperatures up to 95 °C, and a small signal-frequency-response bandwidth f3dB of 14 GHz was achieved at a bias current of 60 mA at 95 °C. Using this laser, clear 25-Gb/s operation was obtained at 95 °C. In addition, stable operation was achieved for up to 4000 h at 85 °C, indicating the basic applicability of the device to next-generation 25-Gb/s data communication systems. Furthermore, the developed technology was applied to a novel uncooled 25-Gb/s 1.3-μm surface-emitting laser for optical interconnects, in which a 45° mirror and a lens were integrated monolithically.
Keywords :
III-V semiconductors; aluminium compounds; frequency response; gallium arsenide; high-temperature effects; indium compounds; integrated optics; laser mirrors; lenses; optical communication equipment; optical interconnections; optical modulation; quantum well lasers; ridge waveguides; surface emitting lasers; waveguide lasers; InGaAlAs; bandwidth 14 GHz; bit rate 25 Gbit/s; current 14.9 mA; current 60 mA; data communication systems; electron confinement; high temperature effects; high-speed directly modulated lasers; laser mirror; monolithically integrated lens; multiquantum well; optical communications traffic; optical interconnects; power-consuming electric cooler; ridge-waveguide-type laser; signal-frequency-response bandwidth; size 160 mum; temperature 85 degC; temperature 95 degC; threshold current; uncooled surface-emitting laser; wavelength 1.3 mum; Cavity resonators; Measurement by laser beam; Quantum well devices; Vertical cavity surface emitting lasers; Waveguide lasers; 1.3-μm; Directly modulated laser; InGaAlAs; distributed feedback (DFB); high bit-rate operation; uncooled;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2011.2114644