Title :
Fast and accurate extraction of capacitance parameters for the Statz MESFET model
Author :
Van den Bosch, Sven ; Martens, L.
Author_Institution :
Dept. of Inf. Technol., Univ. of Gent, Belgium
fDate :
8/1/1997 12:00:00 AM
Abstract :
A modified approach to S-parameter fitting of measured MESFET data to the Statz´s model equations is presented. The technique only requires one sweep of measured S-parameters versus frequency at a single bias point. In addition, there is a reduced need for optimization during the extraction procedure. The additional information in the data-fitting code reduces problems with measurement noise and calibration error. The presented method was developed and tested in HP-ICCAP, a software tool for parameter extraction. All measurements are controlled by this software
Keywords :
Schottky gate field effect transistors; capacitance; equivalent circuits; microwave field effect transistors; semiconductor device models; HP-ICCAP; MESFET model; S-parameter fitting; Statz model equations; capacitance parameters extraction; measured MESFET data; software tool; Calibration; Capacitance; Computer errors; Data mining; Equations; Frequency measurement; MESFETs; Noise measurement; Noise reduction; Scattering parameters;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
