Title :
A simple and accurate MESFET channel-current model including bias-dependent dispersion and thermal phenomena
Author :
Roh, Tae Moon ; Kim, Youngsik ; Suh, Youngsuk ; Park, Wee Sang ; Kim, Bumman
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Inst. of Sci. & Technol., South Korea
fDate :
8/1/1997 12:00:00 AM
Abstract :
A new channel-current model of GaAs MESFET suitable for applications to microwave computer-aided design (CAD) has been developed. This model includes the frequency-dispersion effects due to traps and thermal effects. The model parameters are extracted from pulsed I-V measurements at several ambient temperature and quiescent bias points. This model is verified by simulating nonlinear circuits, such as a power amplifier and a mixer
Keywords :
III-V semiconductors; Schottky gate field effect transistors; UHF field effect transistors; circuit CAD; gallium arsenide; microwave field effect transistors; semiconductor device models; thermal analysis; GaAs; GaAs MESFET; bias-dependent dispersion; channel-current model; computer-aided design; frequency-dispersion effects; microwave CAD; pulsed I-V measurements; thermal phenomena; traps; Application software; Circuit simulation; Computational modeling; Design automation; Frequency; Gallium arsenide; MESFETs; Pulse amplifiers; Pulse measurements; Temperature;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
