A simple and accurate MESFET channel-current model including bias-dependent dispersion and thermal phenomena

Author

Roh, Tae Moon ; Kim, Youngsik ; Suh, Youngsuk ; Park, Wee Sang ; Kim, Bumman

Author_Institution

Dept. of Electron. & Electr. Eng., Pohang Inst. of Sci. & Technol., South Korea

Volume

45

Issue

8

fYear

1997

fDate

8/1/1997 12:00:00 AM

Firstpage

1252

Lastpage

1255

Abstract

A new channel-current model of GaAs MESFET suitable for applications to microwave computer-aided design (CAD) has been developed. This model includes the frequency-dispersion effects due to traps and thermal effects. The model parameters are extracted from pulsed I-V measurements at several ambient temperature and quiescent bias points. This model is verified by simulating nonlinear circuits, such as a power amplifier and a mixer

Keywords

III-V semiconductors; Schottky gate field effect transistors; UHF field effect transistors; circuit CAD; gallium arsenide; microwave field effect transistors; semiconductor device models; thermal analysis; GaAs; GaAs MESFET; bias-dependent dispersion; channel-current model; computer-aided design; frequency-dispersion effects; microwave CAD; pulsed I-V measurements; thermal phenomena; traps; Application software; Circuit simulation; Computational modeling; Design automation; Frequency; Gallium arsenide; MESFETs; Pulse amplifiers; Pulse measurements; Temperature;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.618416

Filename

618416