DocumentCode :
1496315
Title :
Enhanced Field Electron Emission From Zinc-Doped CuO Nanowires
Author :
Tsai, Tsung-Ying ; Hsu, Cheng-Liang ; Chang, Shoou-Jinn ; Chen, Szu-I ; Hsueh, Han-Ting ; Hsueh, Ting-Jen
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
33
Issue :
6
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
887
Lastpage :
889
Abstract :
Zinc-doped copper oxide (CuO:Zn) nanowires (NWs) with Cu and Zn layers were grown by thermal oxidation on a glass template in ambient air. The Zn content in the CuO NWs was approximated 9.9%. Field emitters using these CuO:Zn NWs were also fabricated on the glass substrate and compared with those using NWs composed of CuO alone. The threshold fields of the CuO:Zn NW and CuO NW field emitters can be significantly decreased from 8.3 to 4.1 V/mm, and the work function can also be reduced from 4.5 to 1.54 eV by introducing Zn atoms into the CuO NWs.
Keywords :
copper compounds; nanofabrication; nanowires; oxidation; zinc; CuO:Zn; electron volt energy 4.5 eV to 1.54 eV; field electron emission enhancement; field emitter; glass template; nanowire; thermal oxidation; Copper; Doping; Glass; Nanowires; Substrates; Zinc oxide; CuO nanowires (NWs); field electron emission; zinc doped;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2190037
Filename :
6184273
Link To Document :
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