Improvement of the Performance and Stability of Oxide Semiconductor Thin-Film Transistors Using Double-Stacked Active Layers

Author

Park, Jae Chul ; Lee, Ho-Nyeon

Author_Institution

Inst. of Phys. & Appl. Phys., Yonsei Univ., Seoul, South Korea

Volume

33

Issue

6

fYear

2012

fDate

6/1/2012 12:00:00 AM

Firstpage

818

Lastpage

820

Abstract

An amorphous oxide semiconductor thin-film transistor (TFT) with a 47.7-cm² · V^-1 · s^-1 field-effect mobility (μ_FE) and a 1.57-V threshold voltage (V_TH) was produced using a double-stacked active layer composed of a 5-nm indium-zinc-oxide layer and a 60-nm gallium-indium-zinc-oxide (GIZO) layer. The μ_FE is about 2.3 times higher than that of a GIZO TFT, and the V_TH is almost same as that of a GIZO TFT. The stability of this TFT with a double-stacked active layer was superior to that of a GIZO TFT.

Keywords

II-VI semiconductors; gallium compounds; indium compounds; semiconductor thin films; stability; thin film transistors; wide band gap semiconductors; zinc compounds; GIZO TFT; GIZO layer; GaInZnO; amorphous oxide semiconductor TFT stability; double-stacked active layer; double-stacked active layers; gallium-indium-zinc-oxide layer; oxide semiconductor thin-film transistor stability; size 5 nm; size 60 nm; voltage 1.57 V; Circuit stability; Insulators; Iron; Lighting; Logic gates; Stress; Thin film transistors; Amorphous semiconductors; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2190036

Filename

6184275