Broadband Root-Mean-Square Detector in CMOS for On-Chip Measurements of Millimeter-Wave Voltages

Author

Lee, Chuan ; Choi, Wooyeol ; Han, Ruonan ; Shichijo, Hisashi ; Kenneth, K.O.

Author_Institution

Dept. of Electr. Eng., Univ. of Texas at Dallas, Dallas, TX, USA

Volume

33

Issue

6

fYear

2012

fDate

6/1/2012 12:00:00 AM

Firstpage

752

Lastpage

754

Abstract

A root-mean-square Schottky diode detector for estimating millimeter-wave (80-110 GHz) signal voltage using dc or low-frequency measurements for debugging and self-testing is demonstrated. The detector is realized in a 45-nm CMOS process without any process modifications. The detector gain at 30-mV_rms input voltage is 11 V^-1 . The insertion loss is less than 0.2 dB, and the flatness of the detector gain over 80-110 GHz is 15%. The input dynamic range is greater than 29 dB, and the size of the detector including the filter capacitor is 340 m².

Keywords

CMOS integrated circuits; Schottky diodes; millimetre wave measurement; voltage measurement; CMOS process; broadband root-mean-square detector; dc measurements; frequency 80 GHz to 110 GHz; low-frequency measurements; millimeter-wave signal voltage; millimeter-wave voltages; on-chip measurements; root-mean-square Schottky diode detector; size 45 nm; CMOS integrated circuits; Detectors; Gain; Millimeter wave measurements; Schottky diodes; Semiconductor device measurement; Voltage measurement; Detector; Schottky diodes; millimeter-wave voltage measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2190258

Filename

6184276