• DocumentCode
    1496342
  • Title

    Interfacial Elastic Dipoles: A New EOT Shifting Mechanism in HKMG Devices

  • Author

    Liang, Qingqing ; Xu, Qiuxia ; Zhu, Huilong ; Zhong, Huicai ; Li, Junfeng ; Zhao, Chao ; Chen, Dapeng ; Ye, Tianchun

  • Author_Institution
    Inst. of Microelectron., Beijing, China
  • Volume
    33
  • Issue
    6
  • fYear
    2012
  • fDate
    6/1/2012 12:00:00 AM
  • Firstpage
    884
  • Lastpage
    886
  • Abstract
    A new effective-oxide-thickness (EOT) shifting mechanism caused by the interfacial elastic dipoles is analyzed. The EOT can shift without changing the physical thickness of each dielectric layer. This phenomenon is first observed in the experiments of high-k metal-gate device optimization. Detailed studies and ab initio simulations show that this dipole-EOT correlation generally exists in any dielectric interfaces and should be carefully scrutinized in process development.
  • Keywords
    VLSI; optimisation; EOT shifting mechanism; HKMG devices; dipole-EOT correlation; effective-oxide-thickness shifting mechanism; high-k metal-gate device optimization; interfacial elastic dipoles; Atomic clocks; Dielectrics; Hafnium compounds; High K dielectric materials; Logic gates; Silicon; Dipoles; Vfb; effective oxide thickness (EOT); high- $k$ metal gate (HKMG);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2190033
  • Filename
    6184277
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1496342