DocumentCode :
1496372
Title :
Hole Mobilities of 
Quantum-Well Transistor on SOI and Strained SOI
Author :
Yu, W. ; Zhang, B. ; Zhao, Q.T. ; Buca, D. ; Hartmann, J. -M ; Lupták, R. ; Mussler, G. ; Fox, A. ; Bourdelle, K.K. ; Wang, X. ; Mantl, S.
Author_Institution :
Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
Volume :
33
Issue :
6
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
758
Lastpage :
760
Abstract :
Hole mobilities of quantum-well p-MOSFETs on strained Si (sSi)/Si0.5Ge0.5/strained SOI (sSOI) and Si/Si0.5Ge0.5/SOI heterostructure substrates are investigated as a function of temperature. Ge interdiffusion during annealing in highly strained Si0.5Ge0.5 on SOI is reduced by the growth of Si0.5Ge0.5 layer on biaxially tensely strained SOI. As a result, the sSi/Si0.5Ge0.5/sSOI transistors showed significantly higher hole mobilities than the Si/Si0.5Ge0.5/SOI device at low temperatures.
Keywords :
Ge-Si alloys; MOSFET; annealing; hole mobility; quantum well devices; silicon-on-insulator; Si-SiGe; annealing; biaxially tensely strained SOI; heterostructure substrates; hole mobilities; interdiffusion; quantum well p-MOSFET; silicon-on-insulator; MOSFET circuits; Silicon; Silicon germanium; Strain; Substrates; Temperature measurement; Transistors; Hole mobility; SiGe; quantum well (QW); strained Si (sSi);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2190035
Filename :
6184280
Link To Document :
