DocumentCode
1496414
Title
Direct measurements of heterobarrier leakage current and modal gain in 2.3 μm double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers
Author
Donetsky, D.V. ; Belenky, G.L. ; Garbuzov, D.Z. ; Lee, H. ; Martinelli, R.U. ; Taylor, G. ; Luryi, S. ; Connolly, J.C.
Author_Institution
State Univ. of New York, Stony Brook, NY, USA
Volume
35
Issue
4
fYear
1999
fDate
2/18/1999 12:00:00 AM
Firstpage
298
Lastpage
299
Abstract
The heterobarrier hole leakage current and modal gain for GaSb-based lasers have been measured for the first time. It is shown that this leakage current is not a factor limiting high temperature operation of the device. Significant broadening of the optical gain with increasing temperature is demonstrated
Keywords
III-V semiconductors; aluminium compounds; electric current measurement; gain measurement; gallium arsenide; indium compounds; laser transitions; laser variables measurement; leakage currents; quantum well lasers; 2.3 micron; GaSb-based lasers; InGaAsSb-AlGaAsSb; broad area lasers; direct measurements; double QW structure; heterobarrier leakage current; high temperature operation; hole leakage current; modal gain; optical gain broadening; p-substrate; semiconductor lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990242
Filename
756706
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