Title :
Self-aligned GaAs JFETs for low-power microwave amplifiers and RFICs at 2.4 GHz
Author :
Baca, A.G. ; Hietala, V.M. ; Greenway, D. ; Zolper, J.C. ; Dubbert, D.F. ; Sloan, L.R. ; Shul, R.J.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
2/18/1999 12:00:00 AM
Abstract :
Self-aligned GaAs junction field effect transistor (JFET) narrowband amplifiers operating at 2.4 GHz have been designed and fabricated both with discrete JFETs as a hybrid amplifier and as radiofrequency integrated circuits (RFICs). Enhancement-mode JFETs were used in order to be compatible with complementary digital logic. Hybrid amplifiers achieved 8-10 dB of gain at 2.4 GHz and 1 mW DC bias level. The RFIC achieved 10 dB of gain at 2.4 GHz and 2 mW DC bias level
Keywords :
III-V semiconductors; JFET integrated circuits; UHF integrated circuits; gallium arsenide; junction gate field effect transistors; low-power electronics; microwave amplifiers; microwave field effect transistors; 2.4 GHz; 8 to 10 dB; GaAs; RFIC; hybrid amplifier; junction field effect transistor; low-power microwave amplifier; radiofrequency integrated circuit; self-aligned GaAs JFET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990073
