Title :
Fabrication of T-shaped gates using UVIII chemically amplified DUV resist and PMMA
Author :
Chen, Y. ; Macintyre, D. ; Thoms, S.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
2/18/1999 12:00:00 AM
Abstract :
A novel process has been developed for the fabrication of sub-100 nm T-shaped gates for high performance MESFETs and HEMTs using a bilayer of Shipley UVIII DUV resist and polymethylmethacrylate (PMMA). The process is reliable and gives well defined metallised gates. Ratios of gate cross-section to gate length in excess of 20:1 have been achieved
Keywords :
Schottky gate field effect transistors; electron beam lithography; high electron mobility transistors; semiconductor device metallisation; 100 nm; Al; GaAs; PMMA; Shipley resist; T-shaped gates; UVIII chemically amplified DUV resist; bilayer; gate fabrication; high performance HEMTs; high performance MESFETs; metallised gates; polymethylmethacrylate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990196
