• DocumentCode
    1496608
  • Title

    Fabrication of T-shaped gates using UVIII chemically amplified DUV resist and PMMA

  • Author

    Chen, Y. ; Macintyre, D. ; Thoms, S.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
  • Volume
    35
  • Issue
    4
  • fYear
    1999
  • fDate
    2/18/1999 12:00:00 AM
  • Firstpage
    338
  • Lastpage
    339
  • Abstract
    A novel process has been developed for the fabrication of sub-100 nm T-shaped gates for high performance MESFETs and HEMTs using a bilayer of Shipley UVIII DUV resist and polymethylmethacrylate (PMMA). The process is reliable and gives well defined metallised gates. Ratios of gate cross-section to gate length in excess of 20:1 have been achieved
  • Keywords
    Schottky gate field effect transistors; electron beam lithography; high electron mobility transistors; semiconductor device metallisation; 100 nm; Al; GaAs; PMMA; Shipley resist; T-shaped gates; UVIII chemically amplified DUV resist; bilayer; gate fabrication; high performance HEMTs; high performance MESFETs; metallised gates; polymethylmethacrylate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990196
  • Filename
    756734
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1496608