Title :
Numerical analysis of substrate effect on turn-on characteristics of GaAs MESFET
Author_Institution :
Fac. of Syst. Eng., Shibaura Inst. of Technol., Omiya, Japan
fDate :
2/18/1999 12:00:00 AM
Abstract :
The effects of substrate trap `EL2´ on the turn-on characteristics of GaAs MESFETs are studied through two-dimensional simulation. It is found that abnormal current overshoot and subsequent slow transients can be observed due to EL2 when the off-state gate voltage is strongly negative and electrons are also depleted in the substrate
Keywords :
III-V semiconductors; Schottky gate field effect transistors; deep levels; gallium arsenide; numerical analysis; semiconductor device models; substrates; surface states; 2D simulation; EL2 deep traps; GaAs; GaAs MESFET; abnormal current overshoot; numerical analysis; offstate gate voltage; slow transients; substrate effect; substrate trap; turn-on characteristics; two-dimensional simulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990198
