• DocumentCode
    1496638
  • Title

    Study of quarter-micrometre retrograde well: device characteristics against temperature

  • Author

    Toe-Naing, Swe ; Kiat-Seng, Yeo

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
  • Volume
    35
  • Issue
    4
  • fYear
    1999
  • fDate
    2/18/1999 12:00:00 AM
  • Firstpage
    345
  • Lastpage
    346
  • Abstract
    A comprehensive study is presented of the effects of temperature and well-implant energy on the performance and short channel characteristics of 0.25 μm pMOSFETs. Tradeoffs between performance and short-channel effects (SCEs) are examined experimentally based on the device on-current (Ion), off-current (Ioff), saturation transconductance (Gm), drain-induced barrier lowering (DIBL), and punch-through effect ratio (ΔS/S%)
  • Keywords
    MOSFET; doping profiles; ion implantation; semiconductor device measurement; 0.25 micron; DIBL; device characteristics; device offcurrent; device on-current; drain-induced barrier lowering; p-channel MOSFET; pMOSFETs; performance characteristics; punch-through effect ratio; quarter-micrometre retrograde well; saturation transconductance; short channel characteristics; temperature effects; well-implant energy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990217
  • Filename
    756739
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1496638