DocumentCode :
1496638
Title :
Study of quarter-micrometre retrograde well: device characteristics against temperature
Author :
Toe-Naing, Swe ; Kiat-Seng, Yeo
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
Volume :
35
Issue :
4
fYear :
1999
fDate :
2/18/1999 12:00:00 AM
Firstpage :
345
Lastpage :
346
Abstract :
A comprehensive study is presented of the effects of temperature and well-implant energy on the performance and short channel characteristics of 0.25 μm pMOSFETs. Tradeoffs between performance and short-channel effects (SCEs) are examined experimentally based on the device on-current (Ion), off-current (Ioff), saturation transconductance (Gm), drain-induced barrier lowering (DIBL), and punch-through effect ratio (ΔS/S%)
Keywords :
MOSFET; doping profiles; ion implantation; semiconductor device measurement; 0.25 micron; DIBL; device characteristics; device offcurrent; device on-current; drain-induced barrier lowering; p-channel MOSFET; pMOSFETs; performance characteristics; punch-through effect ratio; quarter-micrometre retrograde well; saturation transconductance; short channel characteristics; temperature effects; well-implant energy;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19990217
Filename :
756739
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1496638
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