• DocumentCode
    1496721
  • Title

    Within-Layer Overlay Impact for Design in Metal Double Patterning

  • Author

    Ghaida, Rani S. ; Gupta, Puneet

  • Author_Institution
    Dept. of Electr. Eng., Univ. of California, Los Angeles, CA, USA
  • Volume
    23
  • Issue
    3
  • fYear
    2010
  • Firstpage
    381
  • Lastpage
    390
  • Abstract
    In double patterning lithography (DPL), overlay errors between two patterning steps of the same layer translate into CD variability. Since CD uniformity budget is very tight, meeting requirement of overlay control is one of the biggest challenges for deploying DPL. In this paper, we electrically evaluate overlay errors for back-end-of-line DPL with the goal of studying relative effects of different overlay sources and interactions of overlay control with design parameters. Experimental results show the following: 1) the expected electrical impact of overlay in a path is not significant (<; 6% worst-case RC variation) and should be the basis for determining overlay budget requirement; 2) the worst-case electrical impact of overlay in a single line remains a serious concern (up to 16.6% ΔRC and up to 50 mV increase of peak crosstalk noise); 3) translational overlay error has the largest electrical impact compared to other overlay sources; and 4) overlay in y direction (x for horizontal metallization) has negligible electrical impact and, therefore, preferred routing direction should be taken into account for overlay sampling and alignment strategies. Design methods for reducing overlay electrical impact in wires are then identified. Finally, we explore positive/negative process options from an electrical perspective and conclude that positive process is preferred.
  • Keywords
    crosstalk; design; lithography; alignment strategy; back-end-of-line double patterning lithography; critical dimension variability; design; electrical impact; horizontal metallization; metal double patterning; overlay control; overlay sampling; peak crosstalk noise; translational overlay error; within-layer overlay impact; Alignment strategy; congestion; design for manufacturability; double patterning; layout decomposition; negative process; overlay; positive process; wire spreading; wire widening;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2010.2050157
  • Filename
    5467154