Title :
60-GHz pseudomorphic Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.28/Ga/sub 0.72/As low-noise HEMTs
Author :
Tan, K.L. ; Dia, R.M. ; Streit, Dwight C. ; Shaw, L.K. ; Han, A.C. ; Sholley, M.D. ; Liu, P.H. ; Trinh, Tien Q. ; Lin, Tzuenshyan ; Yen, H.C.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
V-band low-noise planar-doped pseudomorphic (PM) InGaAs high electron mobility transistors (HEMTs) were fabricated with an indium mole fraction of 28% in the InGaAs channel. A device with 0.15- mu m T-gate achieved a minimum noise figure of 1.5 dB with an associated gain of 6.1 dB at 61.5 GHz.<>
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor technology; solid-state microwave devices; 0.15 micron; 1.5 dB; 6.1 dB; 61.5 GHz; Al/sub 0.25/Ga/sub 0.75/As-In/sub 0.28/Ga/sub 0.72/As; EHF; HEMTs; InGaAs channel; T-gate; V-band; gain; high electron mobility transistors; mm-waves; noise figure; semiconductors; Aluminum; Electrons; Fabrication; Gain; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Noise figure;
Journal_Title :
Electron Device Letters, IEEE
