Improvement in performance and degradation characteristics of MOSFETs with thin gate oxides grown at high temperature

Author

Joshi, Aniruddha B. ; Kwong, Dim-Lee ; Lee, S.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

12

Issue

1

fYear

1991

Firstpage

28

Lastpage

30

Abstract

A study of the effect of gate oxide growth temperature on the performance and degradation of MOSFETs with thin ( approximately 11 nm) gate oxides is reported. Channel mobility for electrons and holes is observed to increase with the increase in the oxidation temperature (800 to 1100 degrees C). Degradation of on-state and off-state parameters resulting from channel hot-carrier stress is investigated. A good correlation is observed between the degradation of device parameters and interface state generation. It is found that the interface hardness to hot-carrier stress is higher in the MOSFETs with gate oxides grown at higher temperatures.<>

Keywords

insulated gate field effect transistors; oxidation; semiconductor-insulator boundaries; 11 nm; 800 to 1100 C; MOSFETs; Si-SiO/sub 2/; channel hot-carrier stress; degradation; degradation of device parameters; effect of gate oxide growth temperature; high temperature oxides; interface hardness to hot-carrier stress; interface state generation; oxidation temperature; performance; thin gate oxides; Charge carrier processes; Condition monitoring; Degradation; Electron mobility; Hot carriers; MOS devices; MOSFETs; Oxidation; Stress; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.75688

Filename

75688