High-temperature thin-film diamond field-effect transistor fabricated using a selective growth method

Author

Gildenblat, Gennady Sh ; Grot, S.A. ; Hatfield, C.W. ; Badzian, A.R.

Author_Institution

Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA

Volume

12

Issue

2

fYear

1991

Firstpage

37

Lastpage

39

Abstract

Selective growth of boron-doped homoepitaxial diamond films was achieved using sputtered SiO/sub 2/ as a masking layer. The hole mobility of selectively grown films varied between 210 and 290 cm/sup 2//V-s for hole concentration between 1.0*10/sup 14/ and 6.9*10/sup 14/ cm/sup -3/. The technique was used to fabricate a thin-film diamond field-effect transistor operational at 300 degrees C. The channel resistance of the device is an exponential function of temperature. In combination with the selective growth method, this device can be used as a starting point for the development of high-temperature diamond-based integrated circuits.<>

Keywords

diamond; elemental semiconductors; insulated gate field effect transistors; semiconductor epitaxial layers; semiconductor growth; thin film transistors; 300 C; C:B diamond field effect transistors; MOSFET; SiO/sub 2/ gate dielectric; channel resistance; diamond substrate; exponential function of temperature; high temperature diamond IGFET; hole concentration; hole mobility; homoepitaxial diamond films; masking layer; operational at 300 degrees C; selective growth method; selectively grown films; semiconductors; sputtered SiO/sub 2/; thin-film diamond field-effect transistor; Boron; FETs; Insulation; Optical films; Plasma applications; Plasma measurements; Plasma temperature; Sputtering; Substrates; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.75696

Filename

75696