An experimental determination of electron drift velocity in 0.5- mu m gate-length ion-implanted GaAs MESFET´s

Author

Feng, Milton ; Lau, C.L. ; Eu, V.

Author_Institution

Ford Microelectron. Inc., Colorado Springs, CO, USA

Volume

12

Issue

2

fYear

1991

Firstpage

40

Lastpage

41

Abstract

A microwave technique was used to determine the electron drift velocity in an ion-implanted GaAs MESFET with a 0.5*100- mu m gate. The characteristics of the velocity versus drain-to-source voltage for a GaAs MESFET exhibit a peak velocity of 4.0, 3.3, and 2.2*10/sup 7/ cm/s at 100%, 65%, and 31% of I/sub dss/, respectively. This work presents the first experimental determination of electron drift velocity at various gate biases and provides verification for velocity overshoot in ion-implanted GaAs MESFETs.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; 0.5 micron; 100 micron; 4 to 2.2E5 m/s; GaAs; characteristics; electron drift velocity measurement; experimental determination of electron drift velocity; gate biases; gate-length; ion-implanted GaAs MESFETs; microwave technique; peak velocity; semiconductors; submicron; velocity versus drain-to-source voltage; Current measurement; Electron mobility; Frequency measurement; Gain measurement; Gallium arsenide; MESFETs; Microwave measurements; Microwave theory and techniques; Velocity measurement; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.75697

Filename

75697