DocumentCode :
1496774
Title :
PIN Germanium Photodetector Fabrication Issues and Manufacturability
Author :
Vu, Vu A. ; Ioannou, Dimitris E. ; Kamocsai, Robert ; Hyland, Sandra L. ; Pomerene, Andrew ; Carothers, Daniel
Author_Institution :
BAESystems, Inc., Manassas, VA, USA
Volume :
23
Issue :
3
fYear :
2010
Firstpage :
411
Lastpage :
418
Abstract :
We have designed and fabricated high-performance germanium vertical and lateral PIN photodetectors which can be integrated into electronic-photonic circuits and manufactured in a standard CMOS foundry. The performance of these devices will be reported in another paper. This paper describes production process issues and manufacturability. The intent of this paper is to provide solutions to fabrication process issues, to provide methods of cutting costs by simplifying fabrication processes, and to improve yield by widening the process tolerance windows. This paper discusses all the process issues encountered and provides solutions for each of them.
Keywords :
CMOS integrated circuits; electronic products; germanium; photodetectors; Ge; PIN photodetector fabrication; PIN photodetector manufacturability; electronic-photonic circuits; lateral PIN photodetectors; process tolerance windows; production process issues; standard CMOS foundry; vertical PIN photodetectors; Crystal growth; germanium; photodetectors; process control;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2010.2050080
Filename :
5467161
Link To Document :
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