• DocumentCode
    1496774
  • Title

    PIN Germanium Photodetector Fabrication Issues and Manufacturability

  • Author

    Vu, Vu A. ; Ioannou, Dimitris E. ; Kamocsai, Robert ; Hyland, Sandra L. ; Pomerene, Andrew ; Carothers, Daniel

  • Author_Institution
    BAESystems, Inc., Manassas, VA, USA
  • Volume
    23
  • Issue
    3
  • fYear
    2010
  • Firstpage
    411
  • Lastpage
    418
  • Abstract
    We have designed and fabricated high-performance germanium vertical and lateral PIN photodetectors which can be integrated into electronic-photonic circuits and manufactured in a standard CMOS foundry. The performance of these devices will be reported in another paper. This paper describes production process issues and manufacturability. The intent of this paper is to provide solutions to fabrication process issues, to provide methods of cutting costs by simplifying fabrication processes, and to improve yield by widening the process tolerance windows. This paper discusses all the process issues encountered and provides solutions for each of them.
  • Keywords
    CMOS integrated circuits; electronic products; germanium; photodetectors; Ge; PIN photodetector fabrication; PIN photodetector manufacturability; electronic-photonic circuits; lateral PIN photodetectors; process tolerance windows; production process issues; standard CMOS foundry; vertical PIN photodetectors; Crystal growth; germanium; photodetectors; process control;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2010.2050080
  • Filename
    5467161