DocumentCode
1496774
Title
PIN Germanium Photodetector Fabrication Issues and Manufacturability
Author
Vu, Vu A. ; Ioannou, Dimitris E. ; Kamocsai, Robert ; Hyland, Sandra L. ; Pomerene, Andrew ; Carothers, Daniel
Author_Institution
BAESystems, Inc., Manassas, VA, USA
Volume
23
Issue
3
fYear
2010
Firstpage
411
Lastpage
418
Abstract
We have designed and fabricated high-performance germanium vertical and lateral PIN photodetectors which can be integrated into electronic-photonic circuits and manufactured in a standard CMOS foundry. The performance of these devices will be reported in another paper. This paper describes production process issues and manufacturability. The intent of this paper is to provide solutions to fabrication process issues, to provide methods of cutting costs by simplifying fabrication processes, and to improve yield by widening the process tolerance windows. This paper discusses all the process issues encountered and provides solutions for each of them.
Keywords
CMOS integrated circuits; electronic products; germanium; photodetectors; Ge; PIN photodetector fabrication; PIN photodetector manufacturability; electronic-photonic circuits; lateral PIN photodetectors; process tolerance windows; production process issues; standard CMOS foundry; vertical PIN photodetectors; Crystal growth; germanium; photodetectors; process control;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/TSM.2010.2050080
Filename
5467161
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