Title :
Nonlocality of the electron ionization coefficient in n-MOSFETs: an analytic approach
Author :
Higman, J.M. ; Kizilyalli, I.C. ; Hess, Karl
Author_Institution :
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
A theory of the electron ionization coefficient as a function of the spatially varying electric field in n-MOSFETs at 300 K is presented. Assuming an exponentially increasing longitudinal electric field, the spatial variation of the ionization coefficient has been calculated using a Monte Carlo simulation. It is found that, over a wide range of the length parameter which describes the electric field profile, the ionization coefficient scales linearly. The expression given for the electron ionization coefficient depends only on the local field and the length parameter and therefore can be used to incorporate nonlocal hot-electron effects in conventional drift-diffusion device simulators.<>
Keywords :
Monte Carlo methods; electric fields; hot carriers; insulated gate field effect transistors; 300 K; Monte Carlo simulation; analytic approach; electron ionization coefficient; exponentially increasing longitudinal electric field; field profile; length parameter; nonlocal hot-electron effects; spatial variation; spatially varying electric field; Boltzmann equation; Computational efficiency; Degradation; Distribution functions; Electron microscopy; Impact ionization; Large-scale systems; MOSFET circuits; Nonuniform electric fields; Performance analysis;
Journal_Title :
Electron Device Letters, IEEE
