DocumentCode
1496781
Title
Fabrication of robust PbLa(Zr,Ti)O>3 capacitor structures using insulating oxide encapsulation layers for FeRAM integration
Author
Saito, Takashi ; Tsuji, Takao ; Izumi, Kiyotaka ; Hirota, Yusuke ; Okamoto, N. ; Kondo, K. ; Yoshimura, Tetsuzo ; Fujimura, Naoki ; Kitajima, A. ; Oshima, Akihiro
Author_Institution
Dept. of Chem. Eng., Osaka Prefecture Univ., Sakai, Japan
Volume
47
Issue
8
fYear
2011
Firstpage
486
Lastpage
487
Abstract
Various encapsulation oxide thin films of 20 nm Al2O3, HfO2, Bi3Ti4O12 (bismuth titanate, BIT), ZrO2 and SiO2 on the Pt top electrodes and sol-gel derived ferroelectric PbLaZrTiOx (PLZT) capacitors were prepared, and then the hydrogen barrier characteristics were investigated by electrical properties measurements before and after in a 3% hydrogen atmosphere annealing. The Al2O3 film by pulse laser deposition and the SiO2 film by radio frequency sputtering are shown to be promising candidates as the hydrogen barrier layer and maintained 86 and 69% of an initial polarisation value even after 45 minutes of hydrogen annealing, respectively.
Keywords
laser deposition; random-access storage; thin films; Al2O3; Bi3Ti4O12; FeRAM integration; HfO2; SiO2; ZrO2; electrical properties; encapsulation oxide thin films; hydrogen annealing; hydrogen atmosphere annealing; hydrogen barrier characteristics; hydrogen barrier layer; insulating oxide encapsulation layers; pulse laser deposition; radio frequency sputtering; robust PbLa(Zr,Ti)O3 capacitor structures;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2011.0461
Filename
5751785
Link To Document