Title :
Experimental values for the hole diffusion coefficient and collector transit velocity in P-n-p AlGaAs/GaAs HBTs
Author :
Slater, David B., Jr. ; Enquist, Paul M. ; Najjar, Fayez E. ; Chen, Mary Y. ; Hutchby, James A. ; Morris, Arthur S. ; Trew, Robert J.
Author_Institution :
Research Triangle Inst., Research Triangle Park, NC, USA
Abstract :
The diffusion coefficient (D/sub h/) and a value for the collector velocity (v/sub h/) of holes in AlGaAs/GaAs P-n-p HBTs (heterojunction bipolar transistors) were obtained from high-frequency measurements on structures with different base and collector widths. Quantities for D/sub h/ and v/sub h/ of 5.6 cm/sup 2//s and 5.5*10/sup 6/ cm/s, respectively, were obtained by plotting the total emitter-collector delay versus inverse emitter current and extrapolating the data to infinite emitter current to obtain the base and collector transit delays. An f/sub t/ and f/sub max/ as high as 15 and 29 GHz, respectively, were obtained for non-self-aligned (1- mu m emitter mesa/base contact separation) devices with a 2.6- mu m*10- mu m emitter.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; solid-state microwave devices; 15 GHz; 2.6 micron; 29 GHz; 5.5E4 m/s; AlGaAs-GaAs; HBTs; collector transit delays; collector transit velocity; collector velocity; emitter mesa/base contact separation; extrapolating; f/sub max/; f/sub t/; heterojunction bipolar transistors; high-frequency measurements; hole diffusion coefficient; hole velocity; inverse emitter current; nonself aligned devices; p-n-p transistors; semiconductors; total emitter-collector delay; Charge carrier processes; Delay; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices; Microwave technology; Microwave transistors; Radio frequency; Velocity measurement;
Journal_Title :
Electron Device Letters, IEEE
