DocumentCode :
1496804
Title :
Micromachined thermal radiation emitter from a commercial CMOS process
Author :
Parameswaran, M. ; Robinson, Alexander M. ; Blackburn, David L. ; Gaitan, Michael ; Geist, Jon
Author_Institution :
Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
Volume :
12
Issue :
2
fYear :
1991
Firstpage :
57
Lastpage :
59
Abstract :
Fabrication of thermally isolated micromechanical structures capable of generating thermal radiation for dynamic thermal scene simulation (DTSS) is described. Complete compatibility with a commercial CMOS process is achieved through design of a novel, but acceptable, layout for implementation by the CMOS foundry using its regular process sequence. Following commercial production and delivery of the CMOS chips, a single maskless etch in an aqueous ethylemediamine-pyrocatechol mixture is performed to realize the micromechanical structures. The resulting structures are suspended plates consisting of polysilicon resistors encapsulated in the field and CVD (chemical-vapor-deposited) oxides available in the CMOS process. The plates are suspended by aluminum heater leads that are also encapsulated in the field and CVD oxides. Studies of the suitability of these structures for DTSS have been initiated, and early favorable results are reported.<>
Keywords :
display devices; heat radiation; infrared sources; integrated circuit technology; thin film resistors; 2D arrays; Al heater leads; CVD oxides; DTSS; aqueous ethylemediamine-pyrocatechol mixture; compatibility with commercial CMOS process; dynamic IR scene generation; dynamic thermal scene simulation; fabrication; generating thermal radiation; micromachined thermal radiation emitter; oxide encapsulation; polycrystalline Si resistors; polysilicon resistors; regular process sequence; single maskless etch; suspended plates; thermally isolated micromechanical structures; CMOS process; Chemical processes; Chemical vapor deposition; Etching; Fabrication; Foundries; Layout; Micromechanical devices; Production; Resistors;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.75702
Filename :
75702
Link To Document :
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