• DocumentCode
    1496861
  • Title

    A Nested-Reactance Feedback Power Amplifier for Q -Band Applications

  • Author

    Kalantari, Nader ; Buckwalter, James F.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of California-San Diego, La Jolla, CA, USA
  • Volume
    60
  • Issue
    6
  • fYear
    2012
  • fDate
    6/1/2012 12:00:00 AM
  • Firstpage
    1667
  • Lastpage
    1675
  • Abstract
    A power amplifier (PA) topology is presented that incorporates a feedback network around the transistor to satisfy matching requirements. Circuit parameters can be tuned for small- and large-signal circuit operation. The PA is fabricated in a 120-nm SiGe BiCMOS process and performs from 36 to 41 GHz. The PA achieves a saturated output power of 23 dBm and a peak power-added efficiency of 20% at 38 GHz. This is the highest reported output power from a single PA at Q -band in silicon.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; bipolar MIMIC; circuit feedback; millimetre wave power amplifiers; Q-band applications; SiGe BiCMOS process; circuit parameters; feedback network; frequency 36 GHz to 41 GHz; large-signal circuit operation; nested-reactance feedback; power amplifier topology; silicon; size 120 nm; small-signal circuit operation; Capacitors; Gain; Impedance; Power generation; Resonant frequency; Silicon; Silicon germanium; Power-added efficiency (PAE); power amplifier (PA); silicon–germanium (SiGe);
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2012.2190751
  • Filename
    6184352
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1496861