DocumentCode :
1496861
Title :
A Nested-Reactance Feedback Power Amplifier for 
-Band Applications
Author :
Kalantari, Nader ; Buckwalter, James F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California-San Diego, La Jolla, CA, USA
Volume :
60
Issue :
6
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
1667
Lastpage :
1675
Abstract :
A power amplifier (PA) topology is presented that incorporates a feedback network around the transistor to satisfy matching requirements. Circuit parameters can be tuned for small- and large-signal circuit operation. The PA is fabricated in a 120-nm SiGe BiCMOS process and performs from 36 to 41 GHz. The PA achieves a saturated output power of 23 dBm and a peak power-added efficiency of 20% at 38 GHz. This is the highest reported output power from a single PA at Q -band in silicon.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bipolar MIMIC; circuit feedback; millimetre wave power amplifiers; Q-band applications; SiGe BiCMOS process; circuit parameters; feedback network; frequency 36 GHz to 41 GHz; large-signal circuit operation; nested-reactance feedback; power amplifier topology; silicon; size 120 nm; small-signal circuit operation; Capacitors; Gain; Impedance; Power generation; Resonant frequency; Silicon; Silicon germanium; Power-added efficiency (PAE); power amplifier (PA); silicon–germanium (SiGe);
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2012.2190751
Filename :
6184352
Link To Document :
