Title :
Stress Liner Effects for 32-nm SOI MOSFETs With HKMG
Author :
Cai, Ming ; Ramani, Karthik ; Belyansky, Michael ; Greene, Brian ; Lee, Doug H. ; Waidmann, Stephan ; Tamweber, Frank ; Henson, William
Author_Institution :
Semicond. R&D Center, Syst. & Technol. Group, IBM, Hopewell Junction, NY, USA
fDate :
7/1/2010 12:00:00 AM
Abstract :
Strain effects from stress liners on silicon-on-insulator MOSFETs with high-k dielectric and metal gate (HKMG) are reported. By thoroughly evaluating their impact on drive current, mobility, and threshold voltage, the intrinsic performance gain of stress liners is quantified at the 32-nm node with mobility enhancement identified as the major source. It is also experimentally demonstrated that advantageous stress liners can reduce gate leakage currents for MOSFETs with HKMG.
Keywords :
MOSFET; leakage currents; silicon-on-insulator; HKMG; SOI MOSFET; drive current; gate leakage current; high-k dielectric; metal gate; mobility enhancement; silicon-on-insulator; size 32 nm; strain effect; stress liner effect; threshold voltage; CMOS technology; Capacitive sensors; Compressive stress; DSL; High-K gate dielectrics; Leakage current; MOSFETs; Silicon on insulator technology; Tensile stress; Threshold voltage; High-$k$; MOSFETs; metal gate; strained silicon; stress nitride;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2049076
