An analysis of P-Si/sub x/O/sub y/ N/sub (1-y)/H/sub z/ film (y=0 approximately 1) quality affecting aluminum slit-like open metallization

Author

Tokunaga, Kenji ; Tagawa, A. ; Hosoda, S.

Author_Institution

Hitachi Ltd., Tokyo, Japan

Volume

12

Issue

2

fYear

1991

Firstpage

48

Lastpage

50

Abstract

A study of the P-Si/sub x/O/sub y/ N/sub (1-y)/H/sub z/ (y=0 approximately 1) passivation film quality causing aluminum slitlike open metallization is reported. Slitlike open metallization after 150 degrees C, 1000-h aging with various P-Si/sub x/O/sub y/ N/sub (1-y)/H/sub z/ compositions revealed that the higher the deposition temperature and the closer the composition to the oxide (y=1), the more the open failure took place. These results can be explained satisfactorily on the basis of the stress-temperature relation of the two extremes, P-Si/sub x/O and P-Si/sub x/N/sub y/H/sub z/.<>

Keywords

ageing; dielectric thin films; metallisation; passivation; plasma deposited coatings; silicon compounds; thermal stress cracking; 1000 h; 150 C; Al metallization; Si/sub x/O/sub y/N/sub 1-y/H/sub z/ films; aging; analysis; compositions; deposition temperature; film composition; passivation film quality; slitlike open metallization; stress-temperature relation; Aging; Aluminum; Compressive stress; Hysteresis; Metallization; Optical films; Plasma measurements; Plasma temperature; Tensile stress; Thermal stresses;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.75712

Filename

75712