Title :
An analysis of P-Si/sub x/O/sub y/ N/sub (1-y)/H/sub z/ film (y=0 approximately 1) quality affecting aluminum slit-like open metallization
Author :
Tokunaga, Kenji ; Tagawa, A. ; Hosoda, S.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
A study of the P-Si/sub x/O/sub y/ N/sub (1-y)/H/sub z/ (y=0 approximately 1) passivation film quality causing aluminum slitlike open metallization is reported. Slitlike open metallization after 150 degrees C, 1000-h aging with various P-Si/sub x/O/sub y/ N/sub (1-y)/H/sub z/ compositions revealed that the higher the deposition temperature and the closer the composition to the oxide (y=1), the more the open failure took place. These results can be explained satisfactorily on the basis of the stress-temperature relation of the two extremes, P-Si/sub x/O and P-Si/sub x/N/sub y/H/sub z/.<>
Keywords :
ageing; dielectric thin films; metallisation; passivation; plasma deposited coatings; silicon compounds; thermal stress cracking; 1000 h; 150 C; Al metallization; Si/sub x/O/sub y/N/sub 1-y/H/sub z/ films; aging; analysis; compositions; deposition temperature; film composition; passivation film quality; slitlike open metallization; stress-temperature relation; Aging; Aluminum; Compressive stress; Hysteresis; Metallization; Optical films; Plasma measurements; Plasma temperature; Tensile stress; Thermal stresses;
Journal_Title :
Electron Device Letters, IEEE
