• DocumentCode
    1497250
  • Title

    SiGe p-channel MOSFETs with tungsten gate

  • Author

    Ternent, G. ; Asenov, A. ; Thayne, I.G. ; Macintyre, D.S. ; Thoms, S. ; Wilkinson, C.D.W. ; Parker, E.H.C. ; Gundlach, A.M.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
  • Volume
    35
  • Issue
    5
  • fYear
    1999
  • fDate
    3/4/1999 12:00:00 AM
  • Firstpage
    430
  • Lastpage
    431
  • Abstract
    A self-aligned SiGe p-channel MOSFET tungsten gate process with 0.1 μm resolution is demonstrated. Interface charge densities of MOS capacitors realised with the low pressure sputtered tungsten process are comparable with thermally evaporated aluminium gate technologies (5×1010cm-2 and 2×1011 cm -2 for W and Al, respectively). Initial results from 1 μm gate length SiGe p-channel MOSFETs using the tungsten-based process show devices with a transconductance of 33 mS/mm and effective channel mobility of 190 cm2/Vs
  • Keywords
    Ge-Si alloys; MOS capacitors; MOSFET; carrier mobility; semiconductor materials; silicon compounds; sputter deposition; tungsten; 1 micron; MOS capacitors; SiGe-SiO2-W; effective channel mobility; interface charge densities; low pressure sputtered process; p-channel MOSFETs; semiconductor materials; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990305
  • Filename
    757166
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1497250