DocumentCode
1497385
Title
High-Power Monolithically Integrated Traveling Wave Photodiode Array
Author
Beling, Andreas ; Chen, Hao ; Pan, Huapu ; Campbell, Joe C.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Volume
21
Issue
24
fYear
2009
Firstpage
1813
Lastpage
1815
Abstract
A novel traveling wave photodiode array (TWPDA) based on back-illuminated InGaAs-InP charge compensated modified uni-traveling carrier photodiodes is demonstrated. A two-element TWPDA with integrated termination resistor has a responsivity of 0.55 A/W and bandwidth of 17 GHz. The saturation photocurrent and the available electrical output power are 114 mA and + 13 dBm at - 3.5-V bias voltage, respectively.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; optical arrays; photodetectors; photodiodes; InGaAs-InP; back illuminated charge; bandwidth 17 GHz; current 114 mA; electrical output power; integrated termination resistor; monolithically integrated traveling wave photodiode array; saturation photocurrent; unitraveling carrier photodiode; InGaAs–InP; photodetector array; photodiode (PD); traveling wave;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2009.2033817
Filename
5282626
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