Title :
1.4-μm InGaAsP-InP strained multiple-quantum-well laser for broad-wavelength tunability
Author :
Xiang Zhu ; Cassidy, D.T. ; Hamp, M.J. ; Thompson, D.A. ; Robinson, B.J. ; Zhao, Q.C. ; Davies, M.
Author_Institution :
Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada
Abstract :
InGaAsP-InP strained multiple-quantum-well (MQW) lasers for extended wavelength tunability in external cavity operation were designed, fabricated, and tested. The active layer was a strain compensated structure consisting of three 3.2/spl plusmn/0.3 nm and three 6.4/spl plusmn/0.3 nm 1.0% compressive strained wells and five 10.3/spl plusmn/0.3 nm 0.45% tensile strained barrier layers. A 2-μm-wide ridge waveguide laser of length 250 μm, when used in a grating external cavity and with no coatings to alter the reflectivity of the facets, was observed to operate over a range >110 nm. The lasers were designed for applications in trace gas and liquid detection with the goal to maximize the tunable range when operated in external cavities and with no facet coatings.
Keywords :
III-V semiconductors; current density; diffraction gratings; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; laser tuning; optical design techniques; optical fabrication; optical testing; photoluminescence; quantum well lasers; ridge waveguides; semiconductor device testing; waveguide lasers; 1.4 mum; 2 mum; 250 mum; InGaAsP-InP; InGaAsP-InP strained multiple-quantum-well laser; active layer; broad-wavelength tunability; compressive strained wells; design; extended wavelength tunability; external cavity operation; fabrication; facet reflectivity; grating external cavity; liquid detection; ridge waveguide laser; strain compensated structure; tensile strained barrier layers; testing; trace gas detection; Coatings; Face detection; Gas lasers; Gratings; Optical design; Quantum well devices; Reflectivity; Tensile strain; Testing; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
