Power penalty in 1.3-μm InP-based strained-layer multiple-quantum-well lasers at elevated temperatures

Author

Seki, S. ; Yokoyama, K.

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

9

Issue

9

fYear

1997

Firstpage

1205

Lastpage

1207

Abstract

We present a basic design rule for reducing the light output power penalty in 1.3-μm InP-based strained layer (SL) multiple-quantum-well (MQW) lasers at elevated temperatures. The power penalty is shown to have a strong correlation with a critical temperature (T/sub c/): above T/sub c/, the power penalty rapidly increases due to a significant reduction in differential quantum efficiency. It is indicated that T/sub c/ can be estimated for an arbitrary laser structure by using a self-consistent numerical method. We show that, to minimize the power penalty, it is essential to design an SL-MQW laser so that its T/sub c/ is larger than the required maximum operation temperature.

Keywords

III-V semiconductors; indium compounds; laser theory; laser transitions; optical design techniques; quantum well lasers; semiconductor device models; 1.3 mum; InP; InP-based strained-layer multiple-quantum-well lasers; SL-MQW laser; basic design rule; critical temperature; differential quantum efficiency; elevated temperatures; light output power penalty; maximum operation temperature; self-consistent numerical method; Fiber lasers; Laser modes; Power generation; Power lasers; Quantum well devices; Semiconductor lasers; Temperature dependence; Temperature distribution; Temperature sensors; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.618478

Filename

618478