Title :
Low-loss fiber-matched low-temperature PECVD waveguides with small-core dimensions for optical communication systems
Author :
Hoffmann, Martin ; Kopka, Peter ; Voges, Edgar
Author_Institution :
Lehrstuhl fur Hochfrequenztech., Dortmund Univ., Germany
Abstract :
Plasma-enhanced chemical vapor deposition (PECVD) offers a simple way of fabricating (doped) silica layers on silicon. A new design of the waveguide core allows low-loss fiber matched waveguides with low birefringence without high-temperature annealing. The increased loss of doped plasma deposited silica due to hydrogen incorporation is overcome by reducing the core dimensions and increasing the refractive index contrast. The waveguides can easily be fabricated using standard PECVD technologies and resist masked reactive ion etching (RIE) etching. Integrated optical devices such as 1/spl times/8 power splitters, 1300/1550-nm wavelength multiplexers and thermooptical switches were successfully fabricated and tested.
Keywords :
integrated optics; optical communication equipment; optical design techniques; optical fabrication; optical losses; optical switches; optical waveguide theory; optical waveguides; plasma CVD; silicon; silicon compounds; silicon-on-insulator; sputter etching; thermo-optical effects; wavelength division multiplexing; 1/spl times/8 power splitters; 1300 nm; 1550 nm; RIE etching; SiO/sub 2/-Si; doped plasma deposited silica; doped silica layers; high-temperature annealing; hydrogen incorporation; integrated optical devices; low birefringence; low-loss fiber-matched low-temperature PECVD waveguides; nm wavelength multiplexers; optical communication systems; plasma-enhanced chemical vapor deposition; refractive index contrast; resist masked reactive ion etching; small-core dimensions; thermooptical switches; waveguide core; Annealing; Birefringence; Chemical vapor deposition; Etching; Optical fiber communication; Optical waveguides; Plasma applications; Plasma chemistry; Plasma waves; Silicon compounds;
Journal_Title :
Photonics Technology Letters, IEEE