DocumentCode :
1497537
Title :
Influence of quantum capture and tunneling mechanisms on the dark current of bound-to-continuum quantum-well infrared photodetectors
Author :
Chu, C.H. ; Hung, C.I. ; Wang, Y.H. ; Houng, M.P.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
9
Issue :
9
fYear :
1997
Firstpage :
1262
Lastpage :
1264
Abstract :
We present a theoretical model for the dark current of bound-to-continuum quantum-well infrared photodetectors (QWIPs), by considering the field-induced mixing effect, tunneling rate and phonon scattering rate between bound and continuum states. Using this model, we can see clearly how these mechanisms significantly influence the Fermi levels of bound and continuum electrons, and thus, the dark current. Nonlinear temperature dependence of the dark current at low temperature is predicted and discussed in detail. The simulated dark currents exhibit good agreement with the experimental results, without use of parameter fitting techniques.
Keywords :
Fermi level; dark conductivity; infrared detectors; phonons; photodetectors; semiconductor device models; semiconductor quantum wells; tunnelling; Fermi levels; IR detectors; bound-to-continuum quantum-well infrared photodetectors; continuum states; dark current; field-induced mixing effect; nonlinear temperature dependence; phonon scattering rate; quantum capture; simulated dark currents; theoretical model; tunneling mechanisms; tunneling rate; Dark current; Electrons; Infrared detectors; Particle scattering; Photodetectors; Quantum mechanics; Quantum wells; Temperature dependence; Thermionic emission; Tunneling;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.618498
Filename :
618498
Link To Document :
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