DocumentCode
1497700
Title
Analysis of band-to-band tunneling leakage current in trench-capacitor DRAM cells
Author
Ozaki, T. ; Nitayama, A. ; Hamamoto, T. ; Sunouchi, K. ; Horiguchi, F.
Author_Institution
Toshiba ULSI Res. Center, Kawasaki, Japan
Volume
12
Issue
3
fYear
1991
fDate
3/1/1991 12:00:00 AM
Firstpage
95
Lastpage
97
Abstract
Evidence demonstrating that the band-to-band tunneling leakage current occurs mainly at the edge of the self-aligned isolation rather than the trench upper corners is presented. Moreover, the leakage current increases drastically with the decrease of capacitor oxide thickness. It is shown that the leakage current limits the thickness of capacitor oxide to more than 80 AA even if the operation voltage is reduced to 3.3 V from 5 V.<>
Keywords
DRAM chips; MOS integrated circuits; capacitors; integrated circuit technology; leakage currents; semiconductor device models; tunnelling; 3.3 V; 80 AA; LOCOS isolation; band-to-band tunneling leakage current; capacitor oxide thickness; operation voltage; scaling; self-aligned isolation; trench-capacitor DRAM cells; Capacitors; Current measurement; Degradation; Diodes; Leakage current; Oxidation; Rain; Random access memory; Tunneling; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.75723
Filename
75723
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