• DocumentCode
    1497857
  • Title

    Structural and Magnetic Properties of Perpendicular Magnetized Mn _{2.5} Ga Epitaxial Films

  • Author

    Wu, F. ; Mizukami, S. ; Watanabe, D. ; Sajitha, E.P. ; Naganuma, H. ; Oogane, M. ; Ando, Y. ; Miyazaki, T.

  • Author_Institution
    WPI Adv. Inst. for Mater. Res., Tohoku Univ., Sendai, Japan
  • Volume
    46
  • Issue
    6
  • fYear
    2010
  • fDate
    6/1/2010 12:00:00 AM
  • Firstpage
    1863
  • Lastpage
    1865
  • Abstract
    The influence of annealing temperature and film thickness on structural and magnetic properties of Mn2.5 Ga films were investigated in this work. The annealing temperature of 400°C was found to be the optimum condition to obtain the films with high perpendicular magnetic anisotropy (PMA) (Ku eff = 7.8 × 106 erg/cm3) and smooth surface (Ra ¿ 0.15 nm). The PMA property was maintained in the 5 nm thick film, and deterioration of the PMA properties with decreasing film thickness can be ascribed to the tensile strain existed in the thin Mn2.5 Ga films.
  • Keywords
    annealing; gallium alloys; magnetic epitaxial layers; magnetoelectronics; manganese alloys; perpendicular magnetic anisotropy; annealing temperature; film thickness; magnetized epitaxial films; perpendicular magnetic anisotropy; spintronics; structural properties; temperature 400 degC; tensile strain; thin films; Annealing; Magnetic anisotropy; Magnetic films; Magnetic materials; Magnetic properties; Magnetic tunneling; Magnetoelectronics; Perpendicular magnetic anisotropy; Substrates; Temperature; Epitaxial film; MRAM; Mn-Ga alloy; perpendicular magnetic anisotropy; spintronics;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2010.2045108
  • Filename
    5467374
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1497857