DocumentCode :
1497857
Title :
Structural and Magnetic Properties of Perpendicular 
Ga Epitaxial Films
Author :
Wu, F. ; Mizukami, S. ; Watanabe, D. ; Sajitha, E.P. ; Naganuma, H. ; Oogane, M. ; Ando, Y. ; Miyazaki, T.
Author_Institution :
WPI Adv. Inst. for Mater. Res., Tohoku Univ., Sendai, Japan
Volume :
46
Issue :
6
fYear :
2010
fDate :
6/1/2010 12:00:00 AM
Firstpage :
1863
Lastpage :
1865
Abstract :
The influence of annealing temperature and film thickness on structural and magnetic properties of Mn2.5 Ga films were investigated in this work. The annealing temperature of 400°C was found to be the optimum condition to obtain the films with high perpendicular magnetic anisotropy (PMA) (Ku eff = 7.8 × 106 erg/cm3) and smooth surface (Ra ¿ 0.15 nm). The PMA property was maintained in the 5 nm thick film, and deterioration of the PMA properties with decreasing film thickness can be ascribed to the tensile strain existed in the thin Mn2.5 Ga films.
Keywords :
annealing; gallium alloys; magnetic epitaxial layers; magnetoelectronics; manganese alloys; perpendicular magnetic anisotropy; annealing temperature; film thickness; magnetized epitaxial films; perpendicular magnetic anisotropy; spintronics; structural properties; temperature 400 degC; tensile strain; thin films; Annealing; Magnetic anisotropy; Magnetic films; Magnetic materials; Magnetic properties; Magnetic tunneling; Magnetoelectronics; Perpendicular magnetic anisotropy; Substrates; Temperature; Epitaxial film; MRAM; Mn-Ga alloy; perpendicular magnetic anisotropy; spintronics;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2010.2045108
Filename :
5467374
Link To Document :
