DocumentCode :
1497860
Title :
160-GHz 1.55- 
Colliding-Pulse Mode-Locked AlGaInAs/InP Laser With High Power and Low Divergence Angle
Author :
Hou, Lianping ; Haji, Mohsin ; Akbar, Jehan ; Bryce, Ann Catrina ; Marsh, John H.
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
Volume :
24
Issue :
12
fYear :
2012
fDate :
6/15/2012 12:00:00 AM
Firstpage :
1057
Lastpage :
1059
Abstract :
A monolithic ~1.55-μm colliding-pulse mode-locked AlGaInAs/InP laser with a three-quantum-well active layer incorporating a passive far-held reduction layer has been demonstrated. The device emits pulses at 162 GHz, with a pulsewidth of 0.98 ps, a pulse energy of 0.13 pJ, and a time-bandwidth product of 0.52, while demonstrating a low divergence angle (12.7° × 26.3°) with a twofold improvement in butt coupling efficiency to a flat cleaved single-mode fiber, compared to the conventional mode-locked lasers.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser mode locking; optical fibre couplers; quantum well lasers; AlGaInAs-InP; butt coupling; colliding pulse mode locked laser; energy 0.13 pJ; flat cleaved single mode fiber; high power laser; low divergence angle; passive far held reduction layer; quantum well active layer; single mode fiber; time 0.98 ps; wavelength 1.55 mum; Harmonic analysis; Laser mode locking; Optical device fabrication; Optical saturation; Optical waveguides; Power generation; Waveguide lasers; AlGaInAs; harmonics; mode-locked laser; optical pulse generation;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2012.2194779
Filename :
6185636
Link To Document :
