Title :
High temperature operation of long-wavelength infrared superlattice detector with supressed dark current
Author :
Hill, C.J. ; Soibel, A. ; Ting, D.Z.-Y. ; Keo, S.A. ; Mumolo, J.M. ; Nguyen, John ; Lee, Minhung ; Gunapala, S.D.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Superlattice (SL) photodetectors operating with a cutoff wavelength of lambda = 10 mum are demonstrated to respond up to a temperature of T = 140 K with a nonunity gain enabling a high responsivity of Rfr = 25 A/W. The improvement in detector performance is achieved by the optimisation of SL heterodiode design in which suppression of dark current is realised without significant impact on the photocurrent.
Keywords :
III-V semiconductors; carrier lifetime; dark conductivity; gallium compounds; indium compounds; infrared detectors; optical design techniques; photoconductivity; photodetectors; photodiodes; semiconductor superlattices; InAs-GaSb; SL heterodiode design optimisation; SL photodetector; SL photodiode; carrier lifetime; dark current suppression; high temperature operated detector performance; long-wavelength infrared superlattice detector; photocurrent; temperature 140 K; wavelength 10 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.1560
