Localized Spin-Torque Effect in CPP-GMR Sensor With Current-Screen Layer

Author

Sato, Yo ; Hoshino, Katsumi ; Okamura, Susumu ; Kato, Keizo ; Hoshiya, Hiroyuki

Author_Institution

Central Res. Lab., Hitachi, Ltd., Odawara, Japan

Volume

46

Issue

6

fYear

2010

fDate

6/1/2010 12:00:00 AM

Firstpage

1610

Lastpage

1613

Abstract

Spin-torque effect in a CPP-GMR sensor with a current-screen layer was investigated via bias voltage dependence of a MR ratio. Unique behavior related to the current-screen layer structure was observed. The bias voltage dependence of the MR ratio in the current-screen-type CPP-GMR sensor was nearly constant with the variation of the free layer thickness. This appears to be due to the finite exchange transmission length of the tilted magnetic moments in the free layer. The finite exchange transmission length originates from the geometric effect in the current-screen layer.

Keywords

giant magnetoresistance; localised states; magnetic moments; magnetic sensors; CPP-GMR sensor; bias voltage; current-perpendicular-to-plane giant-magnetoresistive sensor; current-screen layer; finite exchange transmission length; geometric effect; localized spin-torque effect; tilted magnetic moments; Composite materials; Laboratories; Magnetic confinement; Magnetic field measurement; Magnetic films; Magnetic materials; Magnetic sensors; Magnetoresistance; Saturation magnetization; Voltage; Bias voltage dependence; CPP-GMR; current-screen layer; spin-torque;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2010.2045480

Filename

5467392